Office: 1320 S. W. Mudd, Mail Code: 4712
Phone: +1 212-854-1748
Office hours: Sabbatical
Wen Wang is an eminent researcher in optoelectronic materials, devices, and molecular beam epitaxy. He focuses his research on creating knowledge that can be applied to real-world problems. His current projects include nano and heterostructure material properties, optoelectronic devices, infrared lasers, detectors, and photovoltaics.
He has contributed some 300 papers and published extensively in this area, e.g. Type-II InAs/GaSb superlattices for mid- and long-wavelength applications (Quantum Structure Infrared Photodetectors International Conference, 2010, Istanbul, Turkey); High detectivity InGaAsSb photodetectors with cutoff wavelength up to 2.6 um (J. Crystal Growth, 2009); Interface and optical properties of InGaAsNSb quantum wells (very low threshold 1.3 um lasers, J. Vac. Sci. Tech. 2007); Mid-infrared InGaAsSb quantum well lasers with digitally grown tensile-strained AlGaAsSb barriers (J. Vac. Sci. Tech. 2007); Strain-compensated InGaAsSb quantum well lasers emitting at 2.43 um (environmental and glucose sensing, IEEE PTL, 2005); Invention of a new quinternary dilute nitride InGaAsSbN for mid-infrared optoelectronic devices (JAP 2003 and APL 2001).
Wang is a fellow of the Institute of Electrical and Electronics Engineers, the American Physical Society, John Simon Guggenheim Foundation, and is an Electron Device Society distinguished lecturer.